In the chip manufacturing process, not only core equipment or materials such as lithography machines, etching machines, photoresists, and silicon wafers are needed, but also a special gas in the industry called electronic gas. As one of the upstream raw materials in the industrial chain, special electronic gases are involved in various links such as etching, cleaning, epitaxial growth, and ion implantation. They are indispensable to the entire chip manufacturing industry, so they are called the "blood" of semiconductors.
Since electronic gas affects the performance, integration, yield and other key indicators of integrated circuits, there are high requirements for the purity of electronic gas. Due to major process difficulties, electronic gas has become the second largest material, and its cost share is second only to silicon wafers.
Commonly used etching gases for semiconductor
1. Fluoride gas:
Sulfur hexafluoride SF6 is one of the most commonly used fluoride gases in semiconductor dry etching. It is characterized by high selectivity and strong etching rate. It is suitable for etching of low dielectric constant materials such as silicon oxide, silicon fluoride, silicon nitride, etc.
carbon tetrafluoride(CF4)
Carbon tetrafluorideis CF4 is also used in various wafer etching processes. CF4 is currently the most widely used plasma etching gas in the microelectronics industry. It can be widely used in the etching of thin film materials such as silicon, silicon dioxide, silicon nitride, phosphosilicate glass and tungsten, and in surface cleaning of electronic devices and solar cells. It is also widely used in the production of laser technology, gas phase insulation, low-temperature refrigeration, leak detection agents, controlling the attitude of space rockets, and decontamination agents in printed circuit production.
Nitrogen Trifluoride NF3 Gas has the slowest etching rate among fluoride gases, but has good selectivity. It works well when different materials are isolated from each other and is also suitable for etching organic materials.
2. Oxide Gas:
O2
O2 is a common oxide gas in semiconductor dry etching and can be used to oxidize oxides and metal materials. O2 has a slow etching rate but strong selectivity, so it is suitable for etching most oxide materials.
H2O
H2O is an oxide gas with good relaxation and can be used for etching hard photoresists and organic resins. However, when mixed with fluoride gas, it will affect the selectivity of the reaction.
N2O
N2O can be used to oxidize hydrogenated silicon and metal materials. Its etching rate is faster than O2, but its selectivity is worse than O2.
The above are the types and characteristics of gases commonly used in semiconductor dry etching. Their application in the etching process is very important. For different materials and different etching purposes, it is necessary to select appropriate gases for etching.
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